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DISCRETE SEMICONDUCTORS
DATA SHEET
BSD22 MOSFET N-channel depletion switching transistor
Product specification File under Discrete Semiconductors, SC07 December 1997
Philips Semiconductors
Product specification
MOSFET N-channel depletion switching transistor
DESCRIPTION Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type.The transistor is sealed in a SOT143 envelope and features a low ON-resistance and low capacitances.The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. Applications: * analog and/or digital switch * switch driver * convertor * chopper PINNING 1 2 3 4 = substrate (b) = source = drain = gate Fig.1 Simplified outline and symbol.
1 Top view 2
MAM389
BSD22
Marking code: M32
handbook, halfpage
4
3
d b g s
Note 1. Drain and source are interchangeable
QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 C Junction temperature Drain-source ON-resistance VGS = 10 V; VSB = 0; ID = 1 mA Feed-back capacitance VGS = VBS = -5 V; VDS = 10 V; f = 1 MHz Crss typ. 0.6 pF RDSon max. 30 VDS VGS ID Ptot Tj max. max. max. max. max. 20 + 15 - 40 50 230 125 V V V mA mW C
December 1997
2
Philips Semiconductors
Product specification
MOSFET N-channel depletion switching transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Source-drain voltage Drain-substrate voltage Source-substrate voltage Gate-substrate voltage Gate-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air(1) Note 1. Device mounted on a ceramic subtrate of 8 mm x 10 mm x 0.7 mm. CHARACTERISTICS Tamb = 25 C unless otherwise specified Drain-source breakdown voltage VGS = VBS = -5 V; IS = 10 nA Source-drain breakdown voltage VGD = VBD = -5 V; ID = 10 nA Drain-substrate breakdown voltage VGB = 0; ID = 10 nA; open source Source-substrate breakdown voltage VGB = 0; IS = 10 nA; open drain Drain-source leakage current VGS = VBS = -5 V; VDS = 10 V Source-drain leakage current VGD = VBD = 5 V; VSD = 10 V Gate-substrate leakage current VDB = VSB = 0; VGB = 15 V Forward transconductance at f = 1 kHz VDS = 10 V; VSB = 0; ID = 20 mA Gate-source cut-off voltage VDS = 10 V; VSB = 0; ID = 10 A -V(P)GS max. 2.0 V gfs min. typ. 10 15 mS mS IGBS max. 10 nA ISDoff typ. 1.0 nA IDSoff typ. 1.0 nA V(BR)SBO min. 25 V V(BR)DBO min. 25 V V(BR)SDX min. 20 V V(BR)DSX min. 20 V Rth j-a = 430 C(1) VDS VSD VDB VSB VGB VGS ID Ptot Tstg Tj max. max. max. max. max. max. max. max. max. 20 20 25 25 15 + 15 - 40 50 230 -65 to + 150 125 V V V V V V V mA
BSD22
mW C C
K/W
December 1997
3
Philips Semiconductors
Product specification
MOSFET N-channel depletion switching transistor
Drain-source ON-resistance ID = 1 mA; VSB = 0; VGS = 5 V RDSon typ. max. 25 50
BSD22
VGS = 10 V Capacitances at f = 1 MHz VGS = VBS = -5 V; VDS = 10 V Feed-back capacitance Input capacitance Output capacitance Switching times (see Fig.3) VDD = 10 V; Vi = -5 V to + 5 V
RDSon
typ. max.
15 30
Crss Ciss Coss ton toff
typ. typ. typ. typ. typ.
0.6 1.5 1.0 1.0 5.0
pF pF pF ns ns
handbook, halfpage
Cgd
Cbd
d b s
Ciss Crss
= Cgs + Cgd + Cgb = Cgd Fig.2 Capacitances model.
g Cgb Cgs
Cbs
Coss = Cgd + Cbd
MBK301
handbook, full pagewidth age
VDD
50
0.1 F
90% INPUT 10% tr
90%
Vo 630
10% tf ton 90% toff 90%
Vi 50
T.U.T
OUTPUT
MBK300
10%
10%
MBK296
Fig.3
Switching times and input and output waveforms; Ri = 50 ; tr < 0.5 ns; tf < 1.0 ns; tp = 20 ns; < 0.01.
December 1997
4
Philips Semiconductors
Product specification
MOSFET N-channel depletion switching transistor
PACKAGE OUTLINE Plastic surface mounted package; 4 leads
BSD22
SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
December 1997
5
Philips Semiconductors
Product specification
MOSFET N-channel depletion switching transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BSD22
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
December 1997
6

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